The method of claim 15, wherein a direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to front and back surfaces of the piezoelectric plate.ġ7. A method of fabricating an acoustic resonator device, the method comprising: forming an interdigital transducer (IDT) comprising interleaved fingers on a piezoelectric plate, the piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate and forming a front-side dielectric layer on the piezoelectric plate between the fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the front-side dielectric layer.ġ6. The device of claim 1, wherein the front-side dielectric layer has a thickness in a range from greater than 0 nm to less than or equal to 500 nm.ġ5. The device of claim 8, wherein the front-side dielectric layer is silicon dioxide or silicon nitride.ġ4. The device of claim 8, wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.ġ3. The device of claim 10, wherein a z-axis of the piezoelectric plate is normal to the front and back surfaces, and each of the plurality of IDTs is oriented such that the respective fingers of the IDT are parallel to an x-axis of the piezoelectric plateġ2. The device of claim 9, wherein a direction of acoustic energy flow of each of the respective primary acoustic modes is substantially orthogonal to front and back surfaces of the piezoelectric plate.ġ1. The device of claim 8 further comprising a substrate, wherein portions of the piezoelectric plate form a plurality of diaphragms that span respective cavities in the substrate, and wherein the interleaved fingers of each of the plurality of IDTs are on a respective diaphragm of the plurality of diaphragms.ġ0. A filter device comprising: a piezoelectric plate a conductor pattern on the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs), each of the plurality of IDTs comprising interleaved fingers, wherein the piezoelectric plate and all of the plurality of IDTs configured such that a radio frequency signal applied to each IDT excites a respective shear primary acoustic mode within the piezoelectric plate and a front-side dielectric layer on the piezoelectric plate between the fingers of at least one of the plurality of IDTs, wherein a resonance frequency of the respective acoustic resonator has an inverse dependence on a thickness of the front-side dielectric layer.ĩ. The device of claim 1, wherein the front-side dielectric layer has a thickness in a range from greater than 0 nm to less than or equal to 500 nm.Ĩ. The device of claim 1, wherein the front-side dielectric layer is silicon dioxide or silicon nitride.ħ. The device of claim 1, wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.Ħ. The device of claim 3, wherein a z-axis of the piezoelectric plate is normal to the front and back surfaces, and the IDT is oriented such that the fingers of the IDT are parallel to an x-axis of the piezoelectric plate.ĥ. The device of claim 1, wherein a direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to front and back surfaces of the piezoelectric plate.Ĥ. The acoustic resonator device of claim 1 further comprising a substrate, wherein a portion of the piezoelectric plate forms a diaphragm that spans a cavity in the substrate, and wherein the interleaved fingers of the IDT are on the diaphragm.ģ. An acoustic resonator device comprising: a piezoelectric plate an interdigital transducer (IDT) comprising interleaved fingers on the piezoelectric plate, the piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate and a front-side dielectric layer on the piezoelectric plate between the fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the front-side dielectric layer.Ģ.
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